标题：
A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates
点击次数：
论文类型：
期刊论文
发表刊物：
CHINESE PHYSICS LETTERS
收录刊物：
SCIE、ISTIC、Scopus
卷号：
29
期号：
1
ISSN号：
0256-307X
摘要：
GaN thin films are grown on Si-terminated (0001) 6H-SiC substrates pre-treated with SiH4 in a metal organic chemical vapor deposition system. The influence of the SiH4 pre-treatment conditions on the SiC surface is carefully investigated. It is found that SiH4 could react with the SiC surface oxide, which will change the surface termination. Moreover, our experiments demonstrate that SiH4 pre-treatment can distinctly influence the AlGaN nucleation layer and the basic characteristics of GaN.
发表时间：
2012-01-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院