标题：
Dominant UV emission from p-MgZnO/n-GaN light emitting diodes
点击次数：
论文类型：
期刊论文
发表刊物：
OPTICAL MATERIALS EXPRESS
收录刊物：
Scopus、SCIE、EI
卷号：
2
期号：
1
页面范围：
38-44
ISSN号：
2159-3930
摘要：
The authors report on the fabrication of p-Mg(0.1)Zn(0.9)O/n-GaN light emitting diodes (LEDs). Under forward bias, dominant ultraviolet (UV) electroluminescence is detected within 360-380 nm caused by near band edge (NBE) radiative recombination from both n-GaN and p-Mg(0.1)Zn(0.9)O. It is worth noting that the intensity ratio of UV-NBE/visible-DLE reaches up to 50, which indicates the potential applications of this structure in the short wavelength LEDs. (C) 2011 Optical Society of America
发表时间：
2012-01-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院