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论文类型： 期刊论文

发表时间： 2015-03-01

发表刊物： PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

收录刊物： SCIE、EI、Scopus

卷号： 212

期号： 3

页面范围： 617-622

ISSN号： 1862-6300

关键字： bandgap; core-shell structures; electron mobility; InAs/InP; nanowire diodes; strain engineering

摘要： Bandgap engineering is important for realizing high-performance semiconductor devices. In this paper, an investigation on the nanowire diode with a tapered InAs/InP core-shell structure was carried out. The strain distribution along the nanowire can be changed via the shell thickness and the gradient of the tapering. Due to the misfit-strain between InAs/InP, a strain-induced bandgap variation of 0.21 eV along the tapered InAs wire, which results in the rectifying I-V characteristic of the diode, was realized with an InP shell thickness of 6.5nm. Moreover, due to the optimized shell thickness and strain-induced built-in electric field (including piezoelectric field), a recorded room-temperature electron mobility of 22300 cm(2)V(-1) s(-1) was achieved. This concept of bandgap engineering would enable the designing of a new kind of nanowire device. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim