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Indexed by:期刊论文

Date of Publication:2010-07-14

Journal:JOURNAL OF PHYSICS D-APPLIED PHYSICS

Included Journals:SCIE、EI

Volume:43

Issue:27

ISSN No.:0022-3727

Abstract:Processes of plasma immersion ion implantation are analyszed numerically using a one-dimension-in-space and three-dimension-in-velocity particle-in-cell plus Monte Carlo collision (1D3V PIC-MCC) model. The behaviour of ions and electrons between the processed target and the source plasma is simulated after a nanosecond rise-time voltage pulse is applied to the target. The simulation results show that electron-neutral ionization collisions play a significant role in determining the magnitudes of the ion and electron densities when the pulse rise time is very short, and that the plasma density can be enhanced many times. The physical mechanism for this phenomenon is explained in terms of the formation of a reverse electric field inside the plasma chamber.