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Indexed by:Journal Papers

Date of Publication:2020-03-01

Journal:SCRIPTA MATERIALIA

Included Journals:EI、SCIE

Volume:178

Page Number:493-497

ISSN No.:1359-6462

Key Words:TiAI; Ti3SiC2; Diffusion bonding; Grain boundary diffusion; Amorphous intergranular films

Abstract:The Al-enriched amorphous intergranular films were firstly found and introduced in Ti3SiC2 substrates through Al doping, for enhancing the TiAl/Ti3SiC2 diffusion bonding. The existence of the Al-enriched amorphous intergranular films changed the main diffusion element from Si in the undoped TiAl/Ti3SiC2 joint to Al in the Al-doped joints. The build-ups of the interfacial compounds were gamma+alpha(2)/gamma/Ti5Si3/Ti3SiC2 in the undoped TiAI/Ti3SiC2 joint and were gamma+alpha(2)/gamma/TiAl2/TiAl3+Ti5Si3+Ti5Si4/Ti3SiC2 in the Al-doped joints. The formation of the brittle Ti5Si3 layer was inhibited through Al doping, which enhanced the shear strength of the joint. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.