Release Time:2019-03-13  Hits:

Indexed by: Journal Article

Date of Publication: 2017-11-15

Journal: Materials Science in Semiconductor Processing

Included Journals: Scopus、EI、SCIE

Volume: 71

Issue: -

Page Number: 321-325

Key Words: Semiconductor; Gallium oxide; Nanoindentation; Deformation

Abstract: The deformation of single crystal beta gallium oxide (beta-Ga2O3) under nanoindenting was investigated using transmission electron microscopy. The deformation pattern of beta-Ga2O3 was found to follow a certain route with the increased indentation load: (i) stacking faults along the (200) lattice planes and twinning structures with (2 01) plane as twin boundary, (ii) dislocations on (101) lattice planes and (iii) lattice bending and cracking. Such a deformation pattern is unique, significantly different from that of Si and other semiconductor materials.