Release Time:2019-03-11  Hits:

Indexed by: Conference Paper

Date of Publication: 2012-08-13

Included Journals: Scopus、CPCI-S、EI

Page Number: 1399-1402

Abstract: The line-type Cu/Sn/Cu and Cu/Sn/Ni interconnects were used to investigate the dissolution of substrates under a current density of 2.0x10(4) A/cm(2) at 150 degrees C for 50 h, 100 h and 200 h. For comparison, the line-type Cu/Sn/Cu and Cu/Sn/Ni interconnects were also aged at 150 degrees C for 50h, 100 h and 200 h. According to the experimental results, as the cathodes, no matter Cu or Ni, the dissolution of substrates in both Cu/Sn/Cu and Cu/Sn/Ni interconnects was in linear relationship with time. The dissolution rate of the Cu cathodes in Cu/Sn/Cu interconnects was approximately equal to that in Cu/Sn/Ni interconnects, indicating that the anode material had little effect on the dissolution of Cu cathodes. While in Cu/Sn/Ni interconnects, the Cu substrates dissolved more easily than the Ni substrates under the same conditions, i.e., Ni had a better electromigration (EM) resistance than Cu.