Release Time:2019-03-11  Hits:

Indexed by: Conference Paper

Date of Publication: 2017-08-16

Journal: 18th International Conference on Electronic Packaging Technology, ICEPT 2017

Included Journals: Scopus、EI

Page Number: 1296-1299

Abstract: The effect of anisotropy in   -Sn grain on electromigration (EM)-induced failure mechanism of the Ni/Sn-3.0Ag-0.5Cu/Ni-P solder interconnects was in situ investigated. Sn grain orientation was a crucial factor in dominating the EM behavior. When the c-axis of Sn grain was parallel to the electron flow direction, a larger EM flux was induced, resulting in an excessive dissolution of Ni at the cathode. Sn hillocks were squeezed out at intermetallic compounds (IMCs)/solder interface on the anode side to relieve surficial compressive stress in the current crowding regions. When the c-axis of   -Sn grain was perpendicular to the electron flow direction, EM-induced void formation and propagation at the cathode resulted from the lower Ni diffusion flux. Furthermore, (Ni,Cu)3Sn4-type IMCs precipitated along the c-axis in single   -Sn grain in the bumps. ? 2017 IEEE.