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Effects of temperature and current density on (Au, Pd, Ni)Sn4 redistribution and Ni-P consumption in Ni/Sn3.0Ag0.5Cu/ENEPIG flip chip solder joints

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Indexed by:会议论文

Date of Publication:2013-08-11

Included Journals:EI、Scopus

Page Number:1064-1069

Abstract:The Ni/Sn-3.0Ag-0.5Cu/ENEPIG solder joints were used to investigate the effects of temperature and current density on (Au, Pd, Ni)Sn4 redeposition and Ni-P consumption during electromigration (EM). In as-soldered state, (Cu, Ni)6Sn5 type IMCs formed at both the Sn3.0Ag0.5Cu/Ni and Sn3.0Ag0.5Cu/Ni-P interfaces. Temperature and current density played an important role in (Au, Pd, Ni)Sn4 redeposition and Ni-P consumption. When the solder joints were applied with lower current density (0.9  103 A/cm2) at lower temperature (85   C), no obvious Ni-P consumption observed. (Au, Ni, Pd)Sn4 particles still formed in the solder even after EM for 200 h, no (Au, Ni, Pd)Sn4 particle was observed at both cathode and anode interfaces. When the solder joints were applied with higher current density (1.0  104 A/cm2) at higher temperatures (150 and 180   C), the (Au, Ni, Pd)Sn4 phases preferred to redeposition only at the anode interface while no (Au, Ni, Pd)Sn4 was detected at the cathode interface; Ni-P consumption was significantly affected by current direction, i.e., when the Ni-P layer was the cathode side, the consumption of Ni-P was significantly enhanced; when the Ni-P layer was the anode side, no obvious Ni-P consumption was observed. ? 2013 IEEE.

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