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In situ study on dissolution and growth mechanism of interfacial Cu6Sn5 in wetting reaction

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Indexed by:期刊论文

Date of Publication:2015-01-15

Journal:MATERIALS LETTERS

Included Journals:SCIE、EI、Scopus

Volume:139

Page Number:42-45

ISSN No.:0167-577X

Key Words:Synchrotron radiation; Crystal growth; Intermetallic alloys and compounds; Precipitation; Dissolution; Cu6Sn5

Abstract:Synchrotron radiation real-time imaging technology was used for in situ study of dissolution and growth behavior of interfacial Cu6Sn5 intermetallic compound (IMC) in Sn/Cu solder interconnect during reflow soldering. The pre-formed Cu6Sn5 grains dissolved into the liquid solder with decreasing aspect ratio in the heating stage, maintained a thin layer of scallop-type in the dwelling stage, and re-precipitated on the existing Cu6Sn5 grains at a faster growth rate with increasing aspect ratio in the cooling stage. The Cu concentration gradient at the interface is responsible for the aspect ratio variation (corresponding to dissolution and re-precipitation of interfacial Cu6Sn5 grains), which is also supported by the simulation of atomic diffusion in the solder based on Fick's second law. The growth behavior was well explained by a proposed model based on the Cu concentration gradient. (C) 2014 Elsevier B.V. All rights reserved

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