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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
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- [61]Jiang, Y., Ohno, Wang, Q. P., Tamai, K., Li, L. A., Shinkai, S., Miyashita, T., Motoyama, S-I, 王德君, Ao, J-P.Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2022,29(5)
- [62]Huang, Lingqin, Liu, Bingbing, Zhu, Qiaozhi, Chen, Suhua, Gao, Mingchao, 秦福文, 王德君.Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature...[J],APPLIED PHYSICS LETTERS,2022,100(26)
- [63]He, Miao, Du, Shiyu, 王德君.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[A],International Symposium on Advanced Material Research, ISAMR 2017,2022,753 KEM:134-140
- [64]Yin, Zhipeng, Yang, Chao, Zhang, Fanglong, 苏艳, 秦福文, 王德君.Low-temperature re-oxidation of near-interface defects and voltage stability SiC MOS capacitors[J],APPLIED SURFACE SCIENCE,2022,531
- [65]王德君.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[J],KEY ENGINEERING MATERIALS,2022,753:134-140
- [66]杨超, Zhang, Fanglong, Yin, Zhipeng, 苏艳, 秦福文, 王德君.Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxi...[J],APPLIED SURFACE SCIENCE,2022,488:293-302
- [67]Zhang H.P., Qi R.S., 赵维禄, 章恒丰, 刘国华, 王德君, Niu X.Y., 林茂, Xu L.Y..Forward block characteristic of a novel anti-ESD RF SOI LIGBT with a buried P-type layer[A],2011 China-Japan Joint Microwave Conference, CJMW 2011,2022,454-457
- [68]Cai, Jian, Wang, Junqiang, 王谦, Liu, Ziyu, 王德君, Seo, Sun-Kyoung, Cho, Tae-Je.Low Temperature Solid-State-Diffusion Bonding for Fine-Pitch Cu/Sn/Cu Interconnect[A],IEEE 65th Electronic Components and Technology Conference (ECTC),2022,2015-July:1616-1623
- [69]徐善国, 张红平, 王德君, 刘国华, Niu, X. Y., 林茂, Xu, L. Y..Forward Block characteristic of a novel RF SOI LDMOS with a Buried P-type layer[A],International Silicon on Insulator (SOI) Conference,2022
- [70]王德君.Temperature dependency of GaN MOSFETs on AlGaN/GaN heterostructure[A],the 40th International Symposium on Compound Semiconductors,2022
- [71]王德君.Forward Block characteristic of a novel SOI LDMOS with a Buried P-type layer[A],2010 IEEE International SOI Conference,2022,88-89
- [72]Huang, Lingqin, 王德君.Temperature dependent electrical characteristics of Pt Schottky barriers fabricated on lightly ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,54(11)
- [73]王德君.GaN MOSFET with Boron Trichloride-Based Dry Recess Process[A],11th APCPST (Asia Pacific Conference on Plasma Science and Technology),2022,66-66
- [74]王德君, 赵亮, Zhu, Qiaozhi, Ma, Jikai, Chen, Suhua, Wang, Haibo.Transition region study of SiO2/4H-SiC interface by ADXPS[J],Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,2022,29(5):944-949
- [75]Jiang, Y., Wang, Q.P., Tamai, K., Miyashita, T., Motoyama, S., 王德君, Ao, J.P., Ohno.GaN MOSFET with boron trichloride-based dry recess process[J],Journal of physics Conference series,2022,441(1)
- [76]Zhang H., Qi R., 张丽, Su B., 王德君.Vertical gate RF SOI LIGBT for SPICs with significantly improved latch-up immunity[J],VLSI DESIGN,2022,2011
- [77]Wang, Qingpeng, Jiang, Ying, Zhang, Jiaqi, Li, Liuan, Kawaharada, Kazuya, 王德君, Ao, Jin-Ping.Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process[J],Applied Physics Express,2022,8(4)
- [78]Zhang H., Su B., 孙力, 王德君.Vertical gate RF SOI LIGBT without latch-up susceptibility[A],2009 International Semiconductor Device Research Symposium, ISDRS '09,2022
- [79]Wu, Zijian, Cai, Jian, 王谦, Wang, Junqiang, 王德君.Wafer-Level Hermetic Package by Low-Temperature Cu/Sn TLP Bonding with Optimized Sn Thickness[J],JOURNAL OF ELECTRONIC MATERIALS,2022,46(10):6111-6118
- [80]Zhang Haipeng, 王德君, Geng Lu, Lin Mi, Zhang Zhonghai, Lu Weifeng, Wang Xiaoyuan, 王瑛, 张强, Bai Jianling.High voltage InGaN/GaN/AlGaN RTD suitable for ESD protection applications of GaN/InGaN-based de...[A],2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA),2022,2018-July