Hits:
Indexed by:期刊论文
Date of Publication:2013-01-01
Journal:J. Vac. Sci. Technol. A
Volume:31
Issue:6
Page Number:61308-61308
Pre One:Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF4 plasma
Next One:Mode transition in CF41 Ar inductively coupled plasma