点击次数：

发布时间：2019-03-13

论文类型：期刊论文

发表时间：2016-01-01

发表刊物：RSC ADVANCES

收录刊物：EI、SCIE

卷号：6

期号：65

页面范围：60068-60073

ISSN号：2046-2069

摘要：High-resistivity GaN (HR-GaN) epilayers with an in situ annealed InGaN interlayer were grown by MOCVD technique. Hall-effect measurements show a background carrier concentration as low as 1.0 x 10(12) cm(-3) and a high sheet resistivity of 2.1 x 10(8) Omega per square. Combining the high-resolution X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy characterization, the compensation mechanism through the carbon acceptors impurities induced by increased edge-type threading dislocations (TDs) was demonstrated. Additionally, few increase of the screw TDs density in the HR-GaN epilayers by introducing the annealed InGaN interlayer has been demonstrated, which is beneficial to the device reliability in AlGaN/GaN high electron mobility transistors.