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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2015-12-01

发表刊物：SOLID-STATE ELECTRONICS

收录刊物：Scopus、EI、SCIE

卷号：114

页面范围：148-154

ISSN号：0038-1101

关键字：GaN-based semiconductors; HEMT power devices; Threshold voltage

摘要：The formation of partial AlGaN trench recess filled with multiple fluorinated gate dielectric layers as m etal-insulator-semiconductor (MIS) gate structure for GaN-based HEMT power devices is designed, fabricated and experimentally verified. The approach realizes the device normally-off operational mode and at the same time is able to preserve the good mobility in the 2DEG channel for a maximum on-state current. Experimental measurements on the fabricated MIS-HEMT devices indicate a high gate threshold voltage (V-th) at around 5 V and a very low gate leakage current at pA/mm level. This proposed gate structure provides very promising properties for GaN-based power semiconductor devices in future power electronics switching applications. (C) 2015 Elsevier Ltd. All rights reserved.