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梁红伟 ( 教授 ) 赞
的个人主页 http://faculty.dlut.edu.cn/kid/zh_CN/index.htm
教授博士生导师硕士生导师
主要任职：集成电路学院院长

论文成果当前位置: 中文主页 >> 科学研究 >> 论文成果

[91]柯昀洁, 梁红伟, 申人升, 宋世巍, 夏晓川, 柳阳, 张克雄, 杜国同, Liang, H.-W.(hwliang@dlut.edu.cn).喷淋头高度对InGaN/GaN量子阱生长的影响[J],发光学报,2013,34(4):469-473
[92]杨德超, 梁红伟, 邱宇, 宋世巍, 申人升, 柳阳, 夏晓川, 俞振南, 杜国同, Liang, H.-W.(hwliang@dlut.edu.cn).衬底弯曲度对GaN基LED芯片性能的影响[J],发光学报,2013,34(3):340-344
[93]王东盛, 骆英民, 杜国同, 郭文平, 张克雄, 梁红伟, 宋世巍, 杨德超, 申人升, 柳阳, 夏晓川, Liang, H.-W.(hwliang@dlut.edu.cn).400 nm高性能紫光LED的制作与表征[J],发光学报,2013,34(2):225-229
[94]Zhang, Hezhi, Shen, Rensheng, Liang, Hongwei, Liu, Yuanda, Yang, Xia, Xiaochuan, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1-xN...[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2013,46(6)
[95]Wu, Yunfeng, Yu, Naisen, Liu, Dongping, He, Yangyang, Yuanda, Liang, Hongwei, Du, Guotong, DP (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy[J],APPLIED SURFACE SCIENCE,2013,265:176-179
[96]王东盛, 柳杨, 夏小川, 洛英民, 杜国同, 郭文平, 张克雄, 梁红伟, 宋世巍, 杨德超, 申人升.近紫外GaN基LED的量子效率研究[A],2013,213-213
[97]梁红伟, 申人升, 柳阳, 夏晓川.Fabrication of High-performance 400 nm Violet Light Emitting Diode[J],CHINESE JOURNAL OF LUMINESCENCE（发光学报）,2013,34(2):225-229
[98]张贺秋, 胡礼中, 梁红伟, 骆英民, 边继明.The effect of cooling rate during the hydrothermal growth on the tip geometry of ZnO nanorods[J],Advanced Materials Research,2013,602(1):144-147
[99]张贺秋, 胡礼中, 梁红伟, 骆英民, 边继明.The Effect of Growth Time on the Morphology of ZnO Nanorods by Hydrothermal Method[J],Advanced Materials Research,2013,622(1):855-859
[100]刘艳红, 申人升, 梁红伟.专业课课堂实践教学的探索[J],教育教学论坛,2012,36:222-223
[101]Liu, Yuanda, Shen, Rensheng, Yang, Bian, Jiming, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED[J],APPLIED PHYSICS B-LASERS AND OPTICS,2012,109(4):605-609
[102]Liu, Yuanda, Liang, Hongwei, Xia, Xiaochuan, Bian, Jiming, Shen, Rensheng, Yang, Luo, Yingmin, Du, Guotong, YD (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the Z...[J],JOURNAL OF ELECTRONIC MATERIALS,2012,41(12):3453-3456
[103]刘远达, 杨德超, 申人升, 柳阳, 杜国同, 梁红伟, 夏晓川, 杨建增, 冯艳彬, 宋世魏, 张克雄.MOCVD腔体压力对ZnO薄膜生长的影响[A],2012,394-394
[104]Dechao Yang, 杨德超, Hongwei Liang, 梁红伟, Shiwei Song, 宋世巍.衬底弯曲度(bow)值对LED芯片性能的影响[A],2012,351-355
[105]Dechao Yang, 杨德超, Hongwei Liang, 梁红伟, Shiwei Song, 宋世巍.衬底弯曲度(bow)值对LED芯片性能的影响[A],2012,351-355

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