马春雨
个人信息Personal Information
副教授
硕士生导师
性别:男
毕业院校:大连理工大学
学位:博士
所在单位:物理学院
学科:凝聚态物理
办公地点:大连理工大学物理学院三束材料改性教育部重点实验室厚望楼220房间
电子邮箱:chunyuma@dlut.edu.cn
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- [41]马春雨.反应射频磁控溅射制备HfTaO薄膜的热稳定性和光学性能[J],功能材料,2012,10(43):1268-1272
- [42]李智, 苗春雨, 马春雨, 张庆瑜, Li, Z (reprint author), Dalian Univ, Dept Mech Engn, Dalian 116622, Peoples R China..射频磁控溅射制备HfLaO薄膜结构和光学性能研究[J],无机材料学报,2011,26(12):1281-1286
- [43]Li, H. J., Pu, C. Y., Ma, Sh., Dong, W. J., Bao, S. Y., Zhang, Q. Y., QY (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser, Dalian 116024, Peoples R China..Growth behavior and optical properties of N-doped Cu2O films[J],THIN SOLID FILMS,2011,520(1):212-216
- [44]Wu, Mingxing, Ma, Tingli, Zhang, Qingyu, Xiao, Jinqiu, Chunyu, Lin, Xiao, Miao, He, Youjing, Gao, Yurong, Hagfeldt, Anders, TL (reprint author), Dalian Univ Technol, Sch Chem Engn, State Key Lab Fine Chem, 2 Linggong Rd, Dalian 116024, Liaoning Prov, Peoples R China..Two flexible counter electrodes based on molybdenum and tungsten nitrides for dye-sensitized so...[J],JOURNAL OF MATERIALS CHEMISTRY,2011,21(29):10761-10766
- [45]张欢欢, 李智, 苗春雨, 马春雨, 张庆瑜.射频磁控溅射制备Mn掺杂ZnO薄膜的结构与光学性能[J],功能材料,2011,42(z3):536-540
- [46]Zhang H.-H., Li Z., Miao C.-Y., Ma C.-Y., Zhang Q.-Y., Zhang, H.-H., Key Laboratory of Materials Modification by Laser, Ion, Electron Beams, School of Physics, Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China.Structural and optical properties of Mn-doped ZnO thin films by RF magnetron sputtering[J],Gongneng Cailiao/Journal of Functional Materials,2011,42(SUPPL. JUNE):536-540
- [47]苗春雨, 李树林, 马春雨, 张庆瑜, 李智.反应射频磁控溅射法制备HfTaO薄膜的结构和光学性能[A],2011,1
- [48]李洪婧, 马春雨, 李帅, 董武军, 张庆瑜, Zhang, Q.-Y..沉积温度对N掺杂Cu_2O薄膜生长及光学特性的影响[J],功能材料,2011,42(10):1881-1885
- [49]马春雨, 张庆瑜.沉积温度对N掺杂Cu2O薄膜生长及光学性能的影响[J],功能材料,2011,10(42):1881-1885
- [50]Liu, M., Meletis, E. I., Jiang, J. C., He, J., Zhang, Q. Y., Ma, C. Y., Bao, S. Y., Yu, W. W., Qu, S. W., Chen, C. L., QY (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..Photoluminescence and extinction enhancement from ZnO films embedded with Ag nanoparticles[J],APPLIED PHYSICS LETTERS,2010,97(23)
- [51]张欢欢, 马春雨.热氧化法制备ZnO薄膜的结构及光学特性[A],2009,1
- [52]Zhang, H. H., Ma, C. Y., Q. Y., CY (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dept Phys, Dalian 116022, Peoples R China..Scaling behavior and structure transition of ZrO2 films deposited by RF magnetron sputtering[J],VACUUM,2009,83(11):1311-1316
- [53]马春雨, 张庆瑜.反应溅射法制备铝钛掺杂氧化锆薄膜及其热稳定性[J],材料科学与工程学报,2009,26(12):64-66
- [54]唐鑫, 吕海峰, 马春雨, 赵纪军, 张庆瑜, Zhang, QY (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China..Be掺杂纤锌矿ZnO电子结构的第一性原理研究[J],物理学报,2008,57(12):7806-7813
- [55]刘明, 魏玮, 曲盛薇, 谷建峰, 马春雨, 张庆瑜, Liu, M (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China..氧分压对磁控溅射ZnO薄膜生长行为和光学特性的影响[J],无机材料学报,2008,23(6):1096-1100
- [56]Ma, C. Y., Briois, P., Bohlmark, J., Lapostolle, F., Billard, A., P (reprint author), UTBM, LERMPS, F-90010 Belfort, France..La9.33Si6O26 electrolyte thin films for IT-SOFC application deposited by a HIPIMS/DC hybrid mag...[J],IONICS,2008,14(6):471-476
- [57]马春雨, 李智, 张庆瑜.反应溅射法制备铝钛掺杂氧化锆薄膜及其热稳定的研究[A],2008,152-159
- [58]Liu, Z. W., Fu, W. J., M., Gu, J. F., Ma, C. Y., Zhang, Q. Y., QY (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R China..Scaling behavior and coarsening transition of annealed ZnO films on Si substrate[J],6th Asian-European International Conference on Plasma Surface Engineering,2008,202(22-23):5410-5415
- [59]Tang, X., Lu, H. F., Ma, C. Y., Zhao, J. J., Zhang, Q. Y., QY (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R China..Ab initio investigations on the electronic structure and optical properties of HX-ZnO[J],PHYSICS LETTERS A,2008,372(32):5372-5376
- [60]Ma, C. Y., Zhang, Q. Y., CY (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China..Interfacial layer growth of ZrO2 films on silicon[J],VACUUM,2008,82(8):847-851