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论文类型：期刊论文
发表时间：2014-01-01
发表刊物：Advanced Materials Research
卷号：912
期号：4
页面范围：210-213
上一条：Publishers Note: Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma [Appl. Phys. Lett. 104, 202101 (2014)]
下一条：In-Situ AlN Induced Valence State Variation of V in Vanadium Oxide Films Investigated by XPS
