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论文类型:期刊论文
发表时间:2014-01-01
发表刊物:Journal of Material Science and Technology Research
卷号:1
期号:1
页面范围:15-21
上一条:Influence of Nitridation Time on the Characteristics of GaN Films Deposited on Ni Metal Substrate by ECR-MOCVD
下一条:A comparative study of intermediate layers for the growth of high crystalline GaN films on amorphous glass substrates with low-temperature ECR-PEMOCVD