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发布时间：2019-10-10

论文类型：会议论文

发表时间：1998-01-01

收录刊物：CPCI-S

页面范围：524-527

摘要：The fairly good cubic GaN crystalline films has been heteroepitaxially grown on (001) GaAs substrates by ECR-PAMOCVD under the conditions of low temperature (similar to 600 degrees C) and low pressure (less than or equal to 1Pa). The combination between GaN and GaAs in the region of interface was excellent. The XRD Delta 2 theta of GaN (200) was 35'. The peak of 382nm on PL spectrum demonstrated the near band-edge emission of C-GaN (similar to 3.23ev). The roles of plasma in heteroepitaxy of GaN are discussed also.