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发表时间：2022-10-10

发表刊物：功能材料

期号：9

页面范围：1473-1476

ISSN号：1001-9731

摘要：Diluted magnetic semiconductor film (Ga, Mn)N with Mn concentration up to 3% was grown on sapphire (α-Al2O3) substrate by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The crystal structure and surface topography of the (Ga, Mn)N films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscope (AFM). (Ga, Mn)N films exhibit good (0002) preferred orientation and retain good wurtzite structure, no second phase was detected. The surface topography of (Ga, Mn)N film is composed of many submicron grains piled in the consistent orientation. A peak about donor-acceptor pair is found at 3.27 eV by photoluminescence (PL). SQUID test result shows that the films exhibit ferromagnetic at room temperature, no superparamagnetic or spin glass is detected, the Curie temperature of the film is about 400 K.

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