点击次数：

发布时间：2019-03-09

论文类型：期刊论文

发表时间：2015-07-01

发表刊物：SURFACE ENGINEERING

收录刊物：Scopus、EI、SCIE

卷号：31

期号：7

页面范围：534-539

ISSN号：0267-0844

关键字：GaN films; ITO substrates; N-2 flux; Low temperature deposition; ECR-PEMOCVD

摘要：GaN films have been fabricated on tin doped indium oxide (ITO) coated glass substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapour deposition. Trimethyl gallium (TMGa) and N-2 were acted as precursors of Ga and N respectively. A GaN buffer layer was introduced to reduce the internal stress between the substrate and the GaN films. Then, the deposition process was performed in N-2 rich atmosphere at a constant substrate temperature as low as 460 degrees C. The TMGa flowrate was fixed at 1.5 sccm and N-2 flowrate varies from 80 to 110 sccm to investigate the influence of N-2 flux rates on the films' properties. Reflection high energy electron diffraction and X-ray diffraction results indicate that all deposits are highly c axis oriented, whereas the characteristics of photoluminescence spectra are strongly affected by the N-2 flowrates. GaN films prepared at 100 sccm has a smooth surface and exhibits the optimal illumination performance. This inexpensive GaN/ITO/glass structure has potential application in optoelectronic devices.