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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2013-10-01

发表刊物：CHINESE SCIENCE BULLETIN

收录刊物：Scopus、SCIE

卷号：58

期号：30

页面范围：3617-3623

ISSN号：1001-6538

关键字：GaN; low-temperature deposited; glass substrates; Ti film; ECR-PEMOCVD

摘要：Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) with trimethyl gallium (TMGa) as gallium source. The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), atomic force microscopy (AFM) and Raman scattering. The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm. The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage (I-V) curve. The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes.