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论文类型：期刊论文

发表时间：2013-09-01

发表刊物：APPLIED SURFACE SCIENCE

收录刊物：SCIE、EI、Scopus

卷号：280

页面范围：909-913

ISSN号：0169-4332

关键字：GaN films; Low-temperature; Graphite substrates; ECR-PEMOCVD

摘要：Highly-quality GaN films were deposited on graphite substrates using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) at low temperature. The influence of temperature on the properties of GaN films was investigated systematically by X-ray diffraction analysis (XRD), scanning electron microscope (SEM), and room temperature photoluminescence (PL), respectively. Results indicated that the dense and uniformed GaN films with highly c-axis preferred orientation were successfully achieved on graphite substrates under optimized deposition temperature of 450 degrees C. In addition, the relatively good ohmic contact between GaN and graphite was demonstrated by current-voltage (I-V) characteristics measurement. (C) 2013 Elsevier B.V. All rights reserved.