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发布时间：2019-03-11

论文类型：期刊论文

发表时间：2013-08-15

发表刊物：8th Asian-European International Conference on Plasma Surface Engineering (AEPSE)

收录刊物：Scopus、CPCI-S、EI、SCIE

卷号：228

期号：SUPPL.1

页面范围：S412-S415

ISSN号：0257-8972

关键字：Ar/H-2; P-type nc-Si:H; ECR-PECVD; Langmuir

摘要：Boron-doped hydrogenated nanocrystalline silicon (nc-Si(B):H) films were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effect of Ar/H-2 ratio on the characteristic of as-grown nc-Si(B):H films was investigated systematically with Raman scattering, XRD, XPS as well as Hall effect measurements. The experimental results indicate that the increase of Ar/H-2 ratio can enhance the concentration of B in the as-grown films. On the other hand, with the Ar/H-2 ratio increasing, the crystallinity of the films deteriorated sharply, and the electrical properties of the as-grown films decreased. Langmuir Probe was used to investigate the electron temperature (T-e) of microwave activated B2H6/Ar/H-2 plasmas. Finally, the microscopic mechanism of the enhancement in doping efficiency was elucidated in terms of the plasma reaction equations of B2H6 and Langmuir probe testing result. (C) 2012 Elsevier B.V. All rights reserved.