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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2013-08-05

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：Scopus、EI、SCIE

卷号：103

期号：6

ISSN号：0003-6951

摘要：We proposed an electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing process for SiO2/4H-SiC interface and investigated its effect on the electrical properties of the interface. The results indicate that this process could significantly reduce the density of interface traps (D-it) without degrading the oxide insulating properties. The best result is achieved for the 10-min annealed sample. The N and H, which are only concentrated at the SiO2/SiC interface, both play roles in reducing the D-it. N is more effective in passivating the shallow interface traps, while H is more effective in passivating the deep interface traps. (C) 2013 AIP Publishing LLC.