点击次数：

发布时间：2019-03-09

论文类型：期刊论文

发表时间：2012-04-01

发表刊物：RARE METALS

收录刊物：EI、SCIE

卷号：31

期号：2

页面范围：150-153

ISSN号：1001-0521

关键字：InN films; ECR-PEMOCVD; sapphire substrates; semiconductor devices

摘要：InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl indium (TMIn) and N-2 were applied as precursors of In and N, respectively. The quality of as-grown InN films were systematically investigated as a function of TMIn fluxes by means of reflection high-energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The results show that the dense and uniform InN films with highly c-axis preferred orientation are successfully achieved on sapphire substrates under optimized TMIn flux of 0.8 ml center dot min(-1). The InN films reported here will provide various opportunities for the development of high efficiency and high-performance semiconductor devices based on InN material.