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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2012-02-29

发表刊物：VACUUM

收录刊物：EI、SCIE

卷号：86

期号：8,SI

页面范围：1102-1106

ISSN号：0042-207X

关键字：Low temperature; InN; Glass substrates; ECR-PEMOCVD

摘要：High quality InN films are deposited with an interlayer of high c-orientation (002) AZO (Aluminium-doped Zinc Oxide; ZnO:Al) films on glass substrates by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) at low temperature. AZO films used as a buffer layer are effective for the epitaxial growth of InN films. The influence of Trimethyl Indium (TMIn) flux on the properties of InN films is systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), atomic force microscopy (AFM) and optical transmittance spectra. The results indicate that high quality InN films with high c-orientation and small surface roughness are successfully achieved at an optimized Trimethyl Indium (TMIn) flux of 5.5 sccm. The InN/AZO structures have great potential for the development of full spectra solar cells. (C) 2011 Elsevier Ltd. All rights reserved.