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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2012-02-01

发表刊物：CRYSTAL RESEARCH AND TECHNOLOGY

收录刊物：Scopus、EI、SCIE

卷号：47

期号：2

页面范围：207-212

ISSN号：0232-1300

关键字：GaN; nanowires

摘要：In this work, P-doped GaN nanowires were synthesized in a co-deposition CVD process and the effects of P-doping on the microstructure and cathodoluminescence (CL) of GaN nanowires were studied in details. SEM observation and CL measurments demonstrated that P-doping has led to a rough morphology evolution and a depression of the band-gap emission of GaN nanowires, whereas the visible emission of GaN nanowires was obviously enhanced. Finally, the corresponding morphology transition and optical properties of GaN nanowires with P-doping were discussed. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)