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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2012-01-01

发表刊物：DIAMOND AND RELATED MATERIALS

收录刊物：EI、SCIE

卷号：21

页面范围：88-91

ISSN号：0925-9635

关键字：GaN films; Diamond substrates; SAW devices; ECR-PEMOCVD

摘要：Prefer-oriented GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) at various buffer layers. Trimethyl gallium (TMGa) and N-2 are applied as precursors and various buffer layers are used to achieve high quality GaN films. The influence of buffer layers process on the properties of GaN films is systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD) and atomic force microscopy (AFM). The results show that the high quality GaN films deposited at proper buffer layer process display the fine structural and morphological properties. (C) 2011 Elsevier B.V. All rights reserved.