点击次数：

发布时间：2019-03-09

论文类型：期刊论文

发表时间：2011-01-21

发表刊物：VACUUM

收录刊物：EI、SCIE

卷号：85

期号：7

页面范围：725-729

ISSN号：0042-207X

关键字：GaN films; Diamond films; SAW devices; ECR-PEMOCVD

摘要：High-quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma-enhanced metal organic chemical vapour deposition (ECR-PEMOCVD). Trimethyl gallium (TMGa) and N-2 are applied as precursors and different N-2 fluxes are used to achieve high-quality GaN films. The influence of N-2 flux on the properties of GaN films is systematically investigated by X-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and Hall effect measurement (HL). The results show that the high-quality GaN films with small surface roughness of 4.5 nm and high c-orientation are successfully achieved at the optimized N-2 flux of 90 sccm. The most significant improvements in morphological, structural, and optical properties of GaN films are obtained by using a proper N-2 flux. (c) 2010 Elsevier Ltd. All rights reserved.