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论文类型：期刊论文

发表时间：2017-09-02

发表刊物：INTEGRATED FERROELECTRICS

收录刊物：SCIE、EI、Scopus

卷号：183

期号：1

页面范围：100-109

ISSN号：1058-4587

关键字：PGZT thin films; (100) preferential orientation; dielectric properties; ferroelectric properties; piezoelectric properties

摘要：Gadolinium (Gd)-doped lead zirconium titanate (PGZT) thin films have been prepared by Sol-Gel methods to investigate the effects of Gd doping on crystalline orientation, structural and electric properties of lead zirconium titanate (PZT) films according to doping concentration from 0% to 5%. Conventional heat process and appropriate doping concentration, without introducing a single crystal seed layer, were used for obtaining (100)-oriented PGZT thin films with dense columnar structures. The maximum dielectric constant (1310.35 at 100 Hz) and the optimum ferroelectric properties were obtained for 2% Gd-doped film. 1% Gd-doped PZT film exhibited excellent piezoelectric properties.