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论文类型：期刊论文

发表时间：2017-09-02

发表刊物：INTEGRATED FERROELECTRICS

收录刊物：SCIE、EI、Scopus

卷号：183

期号：1

页面范围：182-192

ISSN号：1058-4587

关键字：PZT thin films; buffer layer; lead content; (100) preferential orientation; sol-gel methods

摘要：Lead zirconate titanate (PZT) thin films deposited on Pt electrode and Pb1+x(Zr-0.52,Ti-0.48)O-3 (x = 0.10, 0.15, 0.25, 0.30) buffer layer have been prepared by sol-gel methods to investigate the effects of lead content in the buffer layer on crystalline orientation, electric and fatigue properties of PZT films. XRD and SEM showed that all films exhibited dense perovskite structure with (100) preferential orientation. Themaximum dielectric constant (1571 at 100 Hz) was obtained in the PZT film with buffer layer containing 25% excess lead, which increased by 42.5% compared with the film without buffer layer. Fatigue resistance was improved by introducing buffer layer.