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论文类型：期刊论文

发表时间：2016-05-01

发表刊物：JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS

收录刊物：SCIE、Scopus

卷号：67

期号：3

页面范围：212-216

ISSN号：1335-3632

关键字：dry etching; plasma; SU-8 photoresist; etching rate

摘要：Photo sensitive polymer SU-8, owing to its excellent mechanical properties and dielectric properties on polymerization, is widely used in MEMS device fabrications. However, the removing, stripping or re-patterning of the cross-linked SU-8 is a difficult issue. In this paper, CF4/O-2 gas mixture provided by a plasma asher equipment was used for the patterning of cross-linked SU-8 material. The RF power, the temperature of the substrate holder, chamber pressure and gas concentration were optimized for the cross-linked SU-8 etching process. When the CF4/O-2 mixture contains about 5% CF4 by volume, the etching rate can be reached at 5.2 mu m/min.