Hits:
Date of Publication:2022-10-03
Journal:Plasma Science and Technology
Volume:18
Issue:4
Page Number:394-399
ISSN No.:1009-0630
Pre One:Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF4 plasma
Next One:Hysteresis induced by gap length effects in capacitively coupled plasmas at low pressures