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Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF4 plasma

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Date of Publication:2022-10-02

Journal:PLASMA SOURCES SCIENCE TECHNOLOGY

Affiliation of Author(s):物理学院

Volume:22

Issue:1

ISSN No.:0963-0252

Pre One:Gas flow characteristics of argon inductively coupled plasma and advections of plasma species under incompressible and compressible flows

Next One:Hybrid Simulation of Duty Cycle Influences on Pulse Modulated RF SiH4/Ar Discharge
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