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Indexed by:期刊论文

Date of Publication:2019-02-01

Journal:JOURNAL OF MATERIALS SCIENCE

Included Journals:SCIE、EI

Volume:54

Issue:3

Page Number:1958-1966

ISSN No.:0022-2461

Key Words:Deformation; Fracture; High resolution transmission electron microscopy; Single crystals; Transmission electron microscopy, Compressive strain; Deformation defects; Deformation pattern; Fracture stress; Gallium oxides; Lattice bending; Lattice plane; Micro Pillars, Gallium compounds

Abstract:The deformation of single-crystal beta-phase gallium oxide (or -Ga2O3) micro-pillars under compression was investigated with the aid of transmission electron microscopy. High-density stacking faults were the dominant deformation defects in the plastically deformed micro-pillars. Micro-cracks were found along (200), (001) and (010) lattice planes and fracture occurred along (200) lattice plane when compressive strain was sufficiently great. Lattice bending was also observed in the fractured pillar. The average fracture stress and strain of -Ga2O3 being measured are 7.25 +/- 1.11GPa and 3.80 +/- 0.57%, respectively, which have never been reported previously.