Current position: Home >> Scientific Research >> Paper Publications

Effect of micromorphology on measurement of residual stress of ground silicon wafers using Raman spectroscopy

Release Time:2024-09-05  Hits:

Date of Publication: 2024-09-05

Journal: JOURNAL OF THE BRAZILIAN SOCIETY OF MECHANICAL SCIENCES AND ENGINEERING

Volume: 46

Issue: 8

ISSN: 1678-5878

Key Words: DAMAGE

Prev One:Exploring Influential Factors Affecting Baseplate Distortion and Residual Stress in Insulated-Gate Bipolar Transistor (IGBT) Modules During Reflow Soldering

Next One:Molecular dynamics simulation analysis of energy deposition on the evolution of single crystal silicon defect system
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep