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单晶碳化硅电化学机械抛光液的组分设计与优化

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Date of Publication:2024-12-05

Journal:金刚石与磨料磨具工程

Volume:44

Issue:05

Page Number:675-684

ISSN No.:1006-852X

Key Words:electrochemical oxidation; material removal rate; polishing slurry compositions; single crystal SiC; surface roughness

CN No.:41-1243/TG

Pre One:Double-Oxidant-Induced Slurry Reaction Mechanism and Performance on Chemical Mechanical Polishing of 4H-SiC (0001) Wafer.

Next One:Cleavage and anisotropy dependence of material removal behavior of monocrystalline β-Ga2O3 in abrasive machining
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