Double-Oxidant-Induced Slurry Reaction Mechanism and Performance on Chemical Mechanical Polishing of 4H-SiC (0001) Wafer
Release Time:2024-12-14 Hits:
Indexed by: Journal Papers
Document Code: 471124
Date of Publication: 2024-12-06
Journal: LANGMUIR
Volume: 40
Issue: 50
Page Number: 26779-26788
ISSN: 0743-7463
Key Words: CMP; COLLOIDAL SILICA; DECOMPOSITION; GROWTH; ION; REMOVAL RATE; SAPPHIRE; SIZES; SUBSTRATE; SURFACE