Current position: Home >> Scientific Research >> Paper Publications

Double-Oxidant-Induced Slurry Reaction Mechanism and Performance on Chemical Mechanical Polishing of 4H-SiC (0001) Wafer.

Release Time:2024-12-14  Hits:

Date of Publication: 2024-12-14

Journal: Langmuir : the ACS journal of surfaces and colloids

ISSN: 0743-7463

Prev One:Quantitative study of oxidation mechanism in photoelectrochemical mechanical polishing of difficult-to-process semiconductor wafers

Next One:单晶碳化硅电化学机械抛光液的组分设计与优化
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep