location: Current position: Home >> Scientific Research >> Paper Publications

Quantitative study of oxidation mechanism in photoelectrochemical mechanical polishing of difficult-to-process semiconductor wafers

Hits:

Date of Publication:2025-10-25

Journal:INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE

Volume:210

ISSN No.:0890-6955

Key Words:ANATASE; GALLIUM NITRIDE; N-TYPE GAN; RUTILE; SINGLE-CRYSTAL

Pre One:Study on clamping deformation of the low-stiffness cylindrical mirror considering adhesive effect

Next One:Double-Oxidant-Induced Slurry Reaction Mechanism and Performance on Chemical Mechanical Polishing of 4H-SiC (0001) Wafer.