First-principles insights into the synergistic chemical-mechanical removal mechanism of 4H-SiC in chemical mechanical polishing
Release Time:2025-10-26 Hits:
Date of Publication: 2025-10-24
Journal: APPLIED SURFACE SCIENCE
Volume: 710
ISSN: 0169-4332
Key Words: CMP; COVALENT RADII; DENSITY; LASER; OXIDATION; SEMICONDUCTOR; TEMPERATURE
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