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Micro-mechanisms of surface oxidation and material removal in photoelectrochemical mechanical polishing of 4H-SiC: Insights from ReaxFF-MD simulation

Release Time:2026-03-29  Hits:

Indexed by: Journal Papers

Document Code: 480180

Date of Publication: 2025-11-18

Journal: TRIBOLOGY INTERNATIONAL

Volume: 211

ISSN: 0301-679X

Key Words: ATOMISTIC MECHANISMS; ENVIRONMENT; MOLECULAR-DYNAMICS SIMULATIONS; REACTIVE FORCE-FIELD; SILICON

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