Oxidation behavior and mechanism of 4H-SiC surface by holes in electrochemical and photoelectrochemical systems
Release Time:2026-03-29 Hits:
Indexed by: Journal Papers
Document Code: 471894
Date of Publication: 2025-03-30
Journal: APPLIED SURFACE SCIENCE
Volume: 686
ISSN: 0169-4332
Key Words: SEMICONDUCTOR; SILICON-CARBIDE