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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
扫描关注
- [221]Liu, W. F., Luo, Y. L., Sang, Y. C., Bian, J. M., Zhao, Y., Y. H., Qin, F. W., FW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Adjusted surface work function of InN films annealed at vacuum and at high-pressure N-2 conditi...[J],MATERIALS LETTERS,2013,95:135-138
- [222]Kang, Dawei, Liu, Aimin, Bian, Jiming, Hu, Zengquan, Yiting, Qiao, Fen, AM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Enhanced surface photovoltage response of ZnO nanorod based inorganic/organic hybrid junctions ...[J],APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2013,110(2):263-267
- [223]边继明, 刘爱民.photovoltage analysis of ZnO nanorods/p-Si heterostructure[J],Materials Science in Semiconductor Processing,2013,1(1):1-4
- [224]张贺秋, 胡礼中, 梁红伟, 骆英民, 边继明.The effect of cooling rate during the hydrothermal growth on the tip geometry of ZnO nanorods[J],Advanced Materials Research,2013,602(1):144-147
- [225]Liu, W. F., Bian, J. M., Zhao, Z. C., Luo, Y. L., Yuan, Z., Zhang, B. Y., A. M., WF (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Low Temperature Surface Passivation of Black Silicon Solar Cells by High-Pressure O-2 Thermal O...[J],ECS SOLID STATE LETTERS,2013,2(4):Q17-Q20
- [226]张贺秋, 胡礼中, 梁红伟, 骆英民, 边继明.The Effect of Growth Time on the Morphology of ZnO Nanorods by Hydrothermal Method[J],Advanced Materials Research,2013,622(1):855-859
- [227]边继明, 刘艳红, 秦福文.Synthesis of SiO2/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor...[J],Applied Physics Letters,2013,103(21):212105-212105
- [228]Liu, Yuanda, Liang, Hongwei, Xia, Xiaochuan, Bian, Jiming, Shen, Rensheng, Yang, Luo, Yingmin, Du, Guotong, YD (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the Z...[J],JOURNAL OF ELECTRONIC MATERIALS,2012,41(12):3453-3456
- [229]Liu, Yuanda, Liang, Hongwei, Shen, Rensheng, Yang, Bian, Jiming, Du, Guotong, Xia, Xiaochuan, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED[J],APPLIED PHYSICS B-LASERS AND OPTICS,2012,109(4):605-609
- [230]Sun, Jingchang, Bian, Jiming, Wang, Yan, Zhang, Sailu, Yuxin, Feng, Qiuju, Liang, Hongwei, Du, Guotong, JC (reprint author), Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China..Influence of radical power on the electrical and optical properties of ZnO:N films grown by met...[J],3rd International Conference on Microelectronics and Plasma Technology (ICMAP),2012,521:253-256
- [231]Zhang, Heqiu, Ren, Xiuming, Hu, Lizhong, Ji, Jiuyu, Li, Yang, Liu, Junlin, Liang, Hongwei, Luo, Yingming, Bian, Jiming.The effect of cooling rate during the hydrothermal growth on the tip geometry of ZnO nanorods[A],2012,602-604:144-147
- [232]Wu, W., Wang, Y. X., Luo, Y. M., Bian, J. M., Sun, J. C., Cheng, C. H., JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..A comparative study of ZnO film and nanorods for ZnO/polyfluorene inorganic/organic hybrid junc...[J],JOURNAL OF ALLOYS AND COMPOUNDS,2012,534:1-5
- [233]Zhang, ZhiKun, Bian, Jiming, Sun, Jingchang, Ma, Xiaowen, Wang, Yuxin, Cheng, Chuanhui, Luo, Yingmin, Liu, Hongzhu, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..High optical quality ZnO films grown on graphite substrate for transferable optoelectronics dev...[J],MATERIALS RESEARCH BULLETIN,2012,47(9):2685-2688
- [234]Liu W.F., Guan J., Bian J.M., Zhao Y., Liu Y.H., Zhang B.Y., Liu A.M..Investigation of single field-effect surface passivation by constructing electrolyte/Si solar cel...[A],2012,407-411
- [235]Ren X., Zhang H., Hu L., Ji J., Li Y., Liu J., Liang H., Luo Y., Bian J..The effect of growth time on the morphology of zno nanorods by hydrothermal method[A],2012,622:855-859
- [236]Zhang, ZhiKun, Bian, Jiming, Sun, Jingchang, Ju, Zhenhe, Wang, Yuxin, Dong, Luo, Yingmin, Liu, Hongzhu, Qin, Fuwen, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..ZnO-based graphite-insulator-semiconductor diode for transferable and low thermal resistance hi...[J],APPLIED PHYSICS LETTERS,2012,101(5)
- [237]Wu Wei, Bian Jiming, Sun Yinglan, Cheng Chuanhui, Sun Jingchang, Liang Hongwei, Luo Yingmin, Du Guotong, Bian, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The Inorganic-organic Hybrid Junction with n-ZnO Nanorods/p-polyfluorene Structure Grown with L...[J],JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION,2012,27(2):296-300
- [238]Qin Fuwen, Zhang Dong, Bai Yizhen, Ju Zhenhe, Li Shuangmei, Li Yucai, Pang Jiaqi, Bian Jiming, Zhang, D (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-pla...[J],RARE METALS,2012,31(2):150-153
- [239]Zhi, An-Bo, Qin, Fu-Wen, Zhang, Dong, Bian, Ji-ming, Yu, Bo, Zhou, Zhi-Feng, Jiang, Xin, FW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Low-temperature growth of highly c-oriented InN films on glass substrates with ECR-PEMOCVD[J],VACUUM,2012,86(8,SI):1102-1106
- [240]Liu, Yuanda, Xia, Xiaochuan, Liang, Hongwei, Zhang, Hezhi, Bian, Jiming, Yang, Shen, Rensheng, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect, Dalian 116024, Peoples R China..Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal a...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2012,23(2):542-545