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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
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- [201]Zhong, M. M., Zhang, D., Wang, H., E. P., Bian, J. M., C., Liu, Y. M., Qin, F. W., JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substra...[J],JOURNAL OF ALLOYS AND COMPOUNDS,2014,583:39-42
- [202]张志坤, 章俞之, 边继明, 孙景昌, 秦福文, 刘维峰, 骆英民, Bian, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..石墨衬底上低维ZnO纳米材料的生长(英文)[J],无机材料学报,2014,29(01):103-107
- [203]边继明, 秦福文.Influence of Nitridation Time on the Characteristics of GaN Films Deposited on Ni Metal Substrate...[J],Advanced Materials Research,2014,912(4):210-213
- [204]边继明.Structural and Optical Properties of VO2 Film Grown on Sapphire Substrate by Pulsed Laser Deposit...[J],Advanced Materials Research,2014,912(4):325-328
- [205]边继明, 秦福文.In-Situ AlN Induced Valence State Variation of V in Vanadium Oxide Films Investigated by XPS[J],Journal of Material Science and Technology Research,2014,1(1):15-21
- [206]边继明, 秦福文.A comparative study of intermediate layers for the growth of high crystalline GaN films on amorph...[J],Materials Science in Semiconductor Processing,2014,26(c):182-186
- [207]Qin, Fuwen, Zhong, Miaomiao, Wang, Chong, Liu, Yuemei, Bian, Jiming, Enping, Hui, Zhang, Dong, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Deposition and characteristics of GaN films on Ni metal substrate by ECR-PEMOCVD[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(12):5069-5074
- [208]Bian, Jiming, Luo, Yingmin, Liu, Weifeng, Qin, Fuwen, Sun, Jingchang, Zhang, Yuzhi, Zhikun, Kou, Xiaoqiang, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Carrier transport mechanisms of n-ZnO/ZnMgO/p-GaN heterojunctions revealed by temperature-depen...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2013,16(6):1684-1687
- [209]Zhang, Zhikun, Bian, Jiming, Bi, Kaifeng, Liu, Yanhong, Dong, Qin, Fuwen, Hongzhu, Miao, Lihua, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Synthesis of SiO2/beta-SiC/graphite hybrid composite by low temperature hot filament chemical v...[J],APPLIED PHYSICS LETTERS,2013,103(21)
- [210]Wang EnPing, Bian JiMing, Qin FuWen, Zhang Dong, Liu YueMei, Zhao Yue, Duan ZhongWei, Wang Shuai, Qin, FW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature[J],CHINESE SCIENCE BULLETIN,2013,58(30):3617-3623
- [211]Duan, Zhongwei, Qin, Fuwen, Lin, Guoqiang, Zhang, Dong, Wang, Enping, Bian, Jiming, FW (reprint author), Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..Effect of temperature on GaN films deposited on graphite substrates at low-temperature[J],APPLIED SURFACE SCIENCE,2013,280:909-913
- [212]Qin F., Wang S., Bian J., Duan Z., Li Q., Zhang D., Ju Z., Zhong M., Wang H., Liu Y., Wang E..Effect of growth temperature on GaN films deposited on stainless steel substrates by ECR-PEMOCVD[A],2013,3:1893-1900
- [213]Sun, Jingchang, Du, Guotong, Bian, Jiming, Chen, Liansong, Wang, Yuxin, Gong, Yu, Li, Yang, Liu, Kuichao, Chang, Cheng, Ming, JC (reprint author), Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China..Realization of wide size range 1D ZnO micro/nano rods for versatile micro/nano devices by contr...[J],APPLIED SURFACE SCIENCE,2013,276:782-786
- [214]Zhang, ZhiKun, Yuzhi, Bian, Jiming, Sun, Jingchang, Qin, Fuwen, Wang, Yuxin, Li, Mengke, Dong, Luo, Yingmin, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..High-quality ZnO nanorods grown on graphite substrates by chemical solution method[J],APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2013,111(4):1071-1076
- [215]Zhao, Yue, Li, Shuangmei, Zhang, Dong, Bian, Jiming, Yan, Xiaohui, Yang, Qin, Fuwen, Bai, Yizhen, Ju, Zhenhe, FW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Low temperature synthesis of GaN films on ITO substrates by ECR-PEMOCVD[J],VACUUM,2013,92:77-80
- [216]边继明, 赵佳明, 刘宏, 颜廷辉, 骆英民, Bian, J., School of Physics, Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China, email: jmbian@dlut.edu.cn.β相V2O5纳米棒的生长及其光电性能[J],解放军理工大学学报（自然科学版）,2013,14(2):232-236
- [217]Kang, Dawei, Bian, Jiming, Sang, Yongchang, Liu, Aimin, Sun, Jingchang, Xuan, Jun, AM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Surface photovoltage analysis of ZnO nanorods/p-Si heterostructure[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2013,16(2):520-524
- [218]Liu, Yuemei, Qin, Fuwen, Zhang, Dong, Bian, Jiming, Zhao, Yue, Wang, Enping, Shuai, Zhong, Miaomiao, Ju, Zhenhe, FW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Liaoning, Peoples R China..Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PE...[J],JOURNAL OF CRYSTAL GROWTH,2013,368:92-96
- [219]Kou X.Q., Bian J.M., Zhang Z.K..Terahertz transmission properties of VO2 thin films deposited on c- and m-plane sapphire substrat...[A],2013,710:25-28
- [220]Zhang Z.K., Bian J.M., Kou X.Q..A novel ZnO-based graphite-insulator-semiconductor diode for transferable unipolar electronic dev...[A],2013,710:29-32