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Indexed by:会议论文

Date of Publication:2013-01-01

Included Journals:CPCI-S

Page Number:1064-+

Key Words:Electromigration; (Au, Pd, Ni)Sn-4; Ni-P; interfacial reaction

Abstract:The Ni/Sn-3.0Ag-0.5Cu/ENEPIG solder joints were used to investigate the effects of temperature and current density on (Au, Pd, Ni)Sn-4 redeposition and Ni-P consumption during electromigration (EM). In as-soldered state, (Cu, Ni)(6)Sn-5 type IMCs formed at both the Sn3.0Ag0.5Cu/Ni and Sn3.0Ag0.5Cu/Ni-P interfaces. Temperature and current density played an important role in (Au, Pd, Ni)Sn-4 redeposition and Ni-P consumption. When the solder joints were applied with lower current density (0.9x10(3) A/cm(2)) at lower temperature (85 degrees C), no obvious Ni-P consumption observed. (Au, Ni, Pd)Sn-4 particles still formed in the solder even after EM for 200 h, no (Au, Ni, Pd)Sn-4 particle was observed at both cathode and anode interfaces. When the solder joints were applied with higher current density (1.0x10(4) A/cm(2)) at higher temperatures (150 and 180 degrees C), the (Au, Ni, Pd)Sn-4 phases preferred to redeposition only at the anode interface while no (Au, Ni, Pd)Sn-4 was detected at the cathode interface; Ni-P consumption was significantly affected by current direction, i. e., when the Ni-P layer was the cathode side, the consumption of Ni-P was significantly enhanced; when the Ni-P layer was the anode side, no obvious Ni-P consumption was observed.