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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
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- [203]Yin, Zhipeng, Yang, Chao, Zhang, Fanglong, Su, Yan, Qin, Fuwen, Wang, Dejun, DJ (corresponding author), Dalian Univ Technol, Sch Control Sci & Engn, Key Lab Intelligent Control & Optimizat Ind Equip, Fac Elect Informat & Elect Engn, Minist Educ, Dalian 116024, Peoples R China..Low-temperature re-oxidation of near-interface defects and voltage stability SiC MOS capacitors[J],APPLIED SURFACE SCIENCE,2020,531
- [204]Zhang, Fanglong, Yang, Chao, Su, Yan, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Key Lab Intelligent Control & Optimizat Ind Equip, Fac Elect Informat & Elect Engn, Sch Control Sci & Engn, Minist Educ, Dalian 116024, Peoples R China..Carrier capture and emission properties of silicon interstitial defects in near SiC/SiO2 interf...[J],APPLIED SURFACE SCIENCE,2020,514
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- [208]Yang, Chao, Gu, Zhenghao, Yin, Zhipeng, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Liaoning Integrated Circuit Technol Key Lab, Sch Control Sci & Engn, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China..Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors...[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2019,52(40)
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- [210]Sun, Yunong, Yang, Chao, Yin, Zhipeng, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Sch Control Sci & Engn, Fac Elect Informat & Elect Engn, Liaoning Integrated Circuit Technol Key Lab, Dalian 116024, Liaoning, Peoples R China..Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors[J],JOURNAL OF APPLIED PHYSICS,2019,125(18)
- [211]He, Miao, Du, Shiyu, Wang, Dejun.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[A],2017,753 KEM:134-140
- [212]王德君.宽带隙半导体SiC器件表面界面基础问题研究进展[A],2015,97-98
- [213]Zhang, Yi-Jie, Wang, De-Jun, Su, Yan, Yin, Zhi-Peng, DJ (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Control Sci & Engn, Liaoning Integrated Circuit Technol Key Lab, Dalian 116024, Peoples R China..Passivation of carbon dimer defects in amorphous SiO2/4H-SiC(0001) interface: A first-principle...[J],CHINESE PHYSICS B,2018,27(4)
- [214]Haipeng Zhang, 王德君.A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability[J],Journal of Semiconductors,2018,39(7):7400401-7400411
- [215]杨超, 王德君.Capacitance–Voltage Measurements and Bias Temperature Stress Induced Flatband Voltage Instabilit...[A],2018,2018(July):13-26
- [216]Zhang Haipeng, Wang Dejun, Geng Lu, Lin Mi, Zhang Zhonghai, Lu Weifeng, Wang Xiaoyuan, Wang Ying, Zhang Qiang, Bai Jianling.High voltage InGaN/GaN/AlGaN RTD suitable for ESD protection applications of GaN/InGaN-based de...[A],2018,2018-July
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- [218]王德君, 何淼, 秦芝, 黄庆, 都时禹.碳化铀核燃料缺陷结构的研究现状[J],核技术,2017,40(7):83-94
- [219]Wang, Junqiang, Qian, Wu, Zijian, Tan, Lin, Cai, Jian, Dejun, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Dalian 116024, Peoples R China., Cai, J (reprint author), Tsinghua Univ, Inst Microelect, Beijing 100084.Plasma combined self-assembled monolayer pretreatment on electroplated-Cu surface for low tempe...[J],APPLIED SURFACE SCIENCE,2017,403:525-530
- [220]He M., Du S., Wang D..First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[A],International Symposium on Advanced Material Research, ISAMR 2017,2017,753 KEM:134-140