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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
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- [223]王德君.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[J],Key Engineering Materials,2017,753:134-140
- [224]Cai, Jian, Wang, Qian, Dejun, Junqiang, Wu, Zijian.Effects of Current Stress for Low Temperature Cu/Sn/Cu Solid-State-Diffusion Bonding[A],2017,0:1742-1747
- [225]Wang, Junqiang, Qian, Wu, Zijian, Dejun, Cai, Jian, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Dalian 116024, Peoples R China., Cai, J (reprint author), Tsinghua Univ, Inst Microelect, Beijing 100084.Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integrati...[J],IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY,2017,7(1):19-26
- [226]Huang, Lingqin, Geiod, Rechard, Wang, Dejun, LQ (reprint author), Jiangsu Normal Univ, Sch Elect Engn & Automat, Xuzhou 221116, Peoples R China..Barrier inhomogeneities and interface states of metal/4H-SiC Schottky contacts[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(12)
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- [228]Wang, Junqiang, Qian, Dejun, Cai, Jian.Study on Ar(5%H-2) Plasma Pretreatment for Cu/Sn/Cu Solid-State-Diffusion Bonding in 3D Interco...[A],2016,2016-August:1765-1771
- [229]Jiang, Ying, Zhang, Fuzhe, Li, Liuan, Shinkai, Satoko, Wang, Dejun, Ao, Jin-Ping, Qingpeng, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Liaoning, Peoples R China., Ao, JP (reprint author), Univ Tokushima, Inst Sci & Technol, Tokushima 7708506, Japan..Improvement of device isolation using field implantation for GaN MOSFETs[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2016,31(3)
- [230]Liu, Bingbing, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, 2 Linggong Rd, Dalian 116024, Peoples R China..Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen...[J],APPLIED SURFACE SCIENCE,2016,364:769-774
- [231]王德君.SiC半导体电子器件关键技术基础问题研究进展[A],2016,7(7):11-13
- [232]秦福文, 王德君.碳化硅MOS器件氧化层界面附近碳存在形式的理论研究进展[J],智能电网,2016,6(1):12-17
- [233]王晓琳, 刘冰冰, 秦福文, 王德君, Wang, D., School of Electronic Science, Technology, Faculty of Electronic Information, Electrical Engineering, Dalian University of TechnologyChina, email: dwang121@dlut.edu.cn.氮氢混合等离子体处理对SiC MOS电容可靠性的影响[J],固体电子学研究与进展,2016,36(1):71-77
- [234]Liu, Bingbing, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Elect Sci & Technol, 2 Linggong Rd, Dalian 116024, Peoples R China..Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-an...[J],APPLIED SURFACE SCIENCE,2015,355:59-63
- [235]Huang, Lingqin, Wang, Dejun, LQ (reprint author), Jiangsu Normal Univ, Sch Elect Engn & Automat, Xuzhou 221116, Peoples R China..Temperature dependent electrical characteristics of Pt Schottky barriers fabricated on lightly ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2015,54(11)
- [236]Huang, Haiyun, Wang, Dejun, Xu, Yue, HY (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Elect Sci & Technol, Dalian 116024, Peoples R China..A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics[J],SENSORS,2015,15(10):27359-27373
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- [238]黄海云, 王德君, 徐跃.CMOS集成2D垂直型霍尔传感器电路设计[J],电子测量与仪器学报,2015,29(9):1295-1301
- [239]Wang, Qingpeng, Jiang, Ying, Zhang, Jiaqi, Kawaharada, Kazuya, Li, Liuan, Dejun, Ao, Jin-Ping, QP (reprint author), Univ Tokushima, Inst Sci & Technol, Tokushima 7708506, Japan..A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2015,30(7)
- [240]Wang, Qingpeng, Jiang, Ying, Zhang, Jiaqi, Kawaharada, Kazuya, Li, Liuan, Dejun, Ao, Jin-Ping, QP (reprint author), Univ Tokushima, Inst Sci & Technol, 2-1 Minami Josanjima, Tokushima 7708506, Japan..Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabrica...[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2015,30(6)