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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
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- [241]Huang, Lingqin, Wang, Dejun, LQ (reprint author), Jiangsu Normal Univ, Sch Elect Engn & Automat, Xuzhou 221116, Peoples R China..Barrier inhomogeneities and electronic transport of Pt contacts to relatively highly doped n-ty...[J],JOURNAL OF APPLIED PHYSICS,2015,117(20)
- [242]Cai, Jian, Wang, Junqiang, Qian, Liu, Ziyu, Dejun, Seo, Sun-Kyoung, Cho, Tae-Je.Low Temperature Solid-State-Diffusion Bonding for Fine-Pitch Cu/Sn/Cu Interconnect[A],2015,2015-July:1616-1623
- [243]Wang, Qingpeng, Jiang, Ying, Zhang, Jiaqi, Li, Liuan, Kawaharada, Kazuya, Dejun, Ao, Jin-Ping, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Dalian 116023, Peoples R China..Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process[J],APPLIED PHYSICS EXPRESS,2015,8(4)
- [244]Li, Wenbo, Zhao, Jijun, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engine, Sch Elect Sci Technol, Dalian 116024, Peoples R China..An amorphous SiO2/4H-SiC(0001) interface: Band offsets and accurate charge transition levels of...[J],SOLID STATE COMMUNICATIONS,2015,205:28-32
- [245]汤斌, 李文波, 刘冰冰, 刘道森, 秦福文, 王德君, Wang, D., Faculty of Electronic Information, Electrical Engineering School of Electronic Science, Technology, Dalian University of TechnologyChina.电子回旋共振氮等离子体氧化后退火对4H-SiC MOS电容TDDB特性的影响[J],固体电子学研究与进展,2015,35(2):191
- [246]江滢, 敖金平, 王德君.GaN场效应晶体管的器件隔离技术[A],2015,273-274
- [247]王德君.宽带隙半导体SiC 器件表面界面基础问题研究进展[A],2015,97-98
- [248]王德君.Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunct...[J],Applied Surface Science,2015,351(10):1155-1160
- [249]刘冰冰, 秦福文, 王德君.氢氮等离子体表面预处理改善SiO2/SiC界面特性[A],2015,118-119
- [250]秦福文, 王德君.Enhanced TiC/SiC Ohmic contacts by electronic cyclotron resonance hydrogen plasma pretreatment an...[J],Applied Surface Science,2015,355(11):59-63
- [251]Li, Wenbo, Zhao, Jijun, Wang, Dejun, WB (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China..Structural and electronic properties of the transition layer at the SiO2/4H-SiC interface[J],AIP ADVANCES,2015,5(1)
- [252]Wang, Qingpeng, Ao, Jin-Ping, Ohno, Yasuo, Dejun, Li, Liuan, Motoyama, Shin-ichi, Miyashita, Takahiro, Jiang, Ying, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, 2 Linggong Rd, Dalian 116024, Peoples R China..Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure[J],SOLID-STATE ELECTRONICS,2014,99:59-64
- [253]密荣荣, 陈子洋, 王德君.林区火灾监测报警系统设计及实现[J],测控技术,2014,33(8):37-40,44
- [254]Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Elect Sci & Technol, Dalian 116024, Peoples R China..Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma (vol 10...[J],APPLIED PHYSICS LETTERS,2014,104(26)
- [255]Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China..Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma[J],APPLIED PHYSICS LETTERS,2014,104(20)
- [256]Jiang, Y., Ohno, Wang, Q. P., Tamai, K., Li, L. A., Shinkai, S., Miyashita, T., Motoyama, S-I, D. J., Ao, J-P, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Dalian 116024, Liaoning, Peoples R China..Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2014,29(5)
- [257]朱祥宇, 王德君, 王俊强, 张海鹏.条纹集电极CIGBT的特性仿真研究[J],电力电子技术,2014,48(3):74-76
- [258]Zhu Q., Wang D., Wang, D., School of Electronic Science, Technology, Faculty of Electronic Information, Electrical Engineering, Dalian University of Technology, Dalian 116024, China, email: dwang121@dlut.edu.cn.Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors[J],Journal of Semiconductors,2014,35(2)
- [259]Wang, Qingpeng, Jiang, Ying, Li, Liuan, Dejun, Ohno, Yasuo, Ao, Jin-Ping, QP (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Liaoning 116024, Peoples R China..Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel Dimensio...[J],IEEE TRANSACTIONS ON ELECTRON DEVICES,2014,61(2,SI):498-504
- [260]王德君.A Compact Behavioral Simulation Model for CMOS Vertical Hall-effect Devices[J],ECS Transactions,2014,60(1):33-38