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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
扫描关注
- [261]王德君.Process dependency on threshold voltage of GaN MOSFETs on AlGaN/GaN Heterostructure[J],Solid-State Electronics,2014,99(9):59-64
- [262]王德君.Improved magnetic sensitivity of CMOS vertical Hall device by using partial implantation techniqu...[J],ECS Transactions,2014,60(1):45-50
- [263]秦福文, 王德君.Publishers Note: Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed...[J],Applied Physics Letters,2014,104(26):269902-269902
- [264]Zhu, Qiaozhi, Li, Wenbo, Qin, Fuwen, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China..Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance mi...[J],PHYSICA B-CONDENSED MATTER,2014,432:89-95
- [265]Cheng, Xiaojun, Zhang, Haipeng, Qi, Ruisheng, Su, Buchun, Zhao, Weili, Wang, Dejun.Silicon-on-insulator lateral-insulated-gate-bipolar-transistor with built-in self-anti-ESD diode[J],Sensors and Transducers,2014,171(5):86-92
- [266]Huang, Haiyun, Xu, Yue, Wang, Dejun, Wu, Jun, Qin, Huibin, Hu, Yongcai.A compact behavioral simulation model for CMOS vertical hall-effect devices[A],2014,60(1):33-38
- [267]Huang, Haiyun, Xu, Yue, Wang, Dejun, Wu, Jun, Qin, Huibin.Improved magnetic sensitivity of CMOS vertical Hall device by using partial implantation techniqu...[A],2014,60(1):45-50
- [268]Zhao T., Cai J., Li Y., Wang Q., Wang D..Integrated passive filters based on silicon substrate for SiP application[A],2013,510-515
- [269]Li, Wenbo, Zhao, Jijun, Zhu, Qiaozhi, Wang, Dejun, DJ (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Elect Sci & Technol, Dalian 116024, Peoples R China..Oxidation of step edges on vicinal 4H-SiC(0001) surfaces[J],APPLIED PHYSICS LETTERS,2013,103(21)
- [270]Zhu, Qiaozhi, Qin, Fuwen, Li, Wenbo, Wang, Dejun, QZ (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China..Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitro...[J],APPLIED PHYSICS LETTERS,2013,103(6)
- [271]陶小妍, 张海鹏, 阴亚东, 王德君.基于TSPC的4/5双模前置分频器设计[A],2013,353-357
- [272]Huang, Lingqin, Qin, Fuwen, Li, Shijuan, Wang, Dejun, LQ (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Elect Sci & Technol, Dalian 116024, Peoples R China..Effects of surface properties on barrier height and barrier inhomogeneities of platinum contact...[J],APPLIED PHYSICS LETTERS,2013,103(3)
- [273]刘沙沙, 秦福文, 朱巧智, 刘冰冰, 汤斌, 王德君, Wang, D., School of Electronic Science, Technology, Faculty of Electronic Information, Electrical Engineering, Dalian University of Technology, Dalian, Liaoning, 116024, China, email: dwang121@dlut.edu.cn.氮钝化SiC MOS界面特性的Gray-Brown法研究[J],固体电子学研究与进展,2013,33(3):211-214
- [274]Li, Wenbo, Zhao, Jijun, Zhu, Qiaozhi, Wang, Dejun, WB (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Elect Sci & Technol, Dalian 116024, Peoples R China..Insight into the initial oxidation of 4H-SiC from first-principles thermodynamics[J],PHYSICAL REVIEW B,2013,87(8)
- [275]王德君.Device isolation for GaN MOSFETs with boron ion implantation[A],2013
- [276]王德君.Devices isolation for GaN MOSFETs on AlGaN/GaN heterostructure[A],2013
- [277]王德君.Oxide thickness dependency on threshold voltage of GaN MOSFETs on AlGaN/GaN heterostructure[A],2013
- [278]王德君.Temperature dependency of GaN MOSFETs on AlGaN/GaN heterostructure[A],2013
- [279]王德君.Development of Enhancement-mode GaN MOSFETs on AlGaN/GaN Heterostructure[A],2013
- [280]王德君.Process dependency on threshold voltage of GaN MOSFETs on AlGaN/GaN heterostructure[A],2013